| 摘要 |
PURPOSE: An organogallium compound, its preparation method and a method for preparing gallium nitride(GaN) thin layer by using the compound are provided, to prevent the nitrogen deficiency in thin layer formation. CONSTITUTION: The organogallium compound is represented by the formula: R2(N3)Ga(R'HNNR'H), wherein R and R' are independent each other and represent hydrogen or an alkyl group of C1-C5. The method for preparing the organogallium compound of the formula: R2(N3)Ga(R'HNNR'H), comprises the steps of reacting HCl salt of the alkylhydrazine of the formula: (R'HNNHR')-HX, with the alkylgallium of the formula: R3Ga, to obtain the compound of the formula: R2(X)Ga(R'HNNR'H), (step 1); and reacting the compound of formula: R2(X)Ga(R'HNNR'H), with azido sodium(step 2), wherein R and R' are independent each other and represent hydrogen or an alkyl group of C1-C5, and X represents a halogen atom. Preferably the step 1 is carried out in THF, acetonitrile or diethylether at -79 to 10 deg.C; and the step 2 is carried out in THF, acetonitrile or toluene at 70-100 deg.C.
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