| 摘要 |
PURPOSE: A method for forming a storage electrode of a semiconductor device is provided to enhance a topology by using a full etching process having a superior uniformity, and reduce a cleaning period by preventing a generation of an etching residual material of CMP process. CONSTITUTION: An interfacial insulating layer(15) having a storage electrode contact plug is formed on a semiconductor substrate(11). A sacrificial insulating layer(19) having a trench exposing a storage electrode is formed on the interfacial insulating layer. A conductive layer for a storage electrode is formed on the total structure. A photoresist layer is formed on the conductive layer for the storage electrode, is smoothened, and is light-exposed. The photoresist layer is developed, and is filled in the trench, thereby forming a photoresist pattern exposing an upper part of the conductive layer. The conductive layer for the storage electrode is fully etched, and thus a cylinder-type storage electrode is formed. The photoresist pattern is removed, the MPS(meta-stable polysilicon) layer(25) is formed in the cylinder-type storage electrode. The first sacrificial insulating layer is removed, and a dielectric layer and a plate electrode are formed.
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