| 摘要 |
PURPOSE: An optimum transmission rate adapting to off-shaft exposure type can maintain and at same time, yield of fabrication processes can be enhanced by changing the shape of the upper layer of pellicle as a dome shape. CONSTITUTION: A shape of an upper layer of a pellicle which is attached to a lower end of a reticle used to a lithography process of the semiconductor device is changed into a dome shape. According to this, an optimum transmission rate adapting to off-shaft exposure type can maintain and at same time, a radial error of a mask can compensate. When forming the pellicle, if the radial error of the mask, the mask CD, become small from the center to the outside, a thickness of the pellicle is formed more small from the center to the outside, whereas if the radial error of the mask, the mask CD, become large from the center to the outside, a thickness of the pellicle is formed more large from the center to the outside. At this time, when forming the pellicle, a spin coating method is used.
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