METHOD FOR FORMING METAL LINE IN SEMICONDUCTOR DEVICES

摘要

PURPOSE: A metal line formation method in semiconductor devices is provided to be capable of preventing a lifting phenomenon of a tungsten metal line by mitigating or buffering a high extension stress of tungsten. CONSTITUTION: An interlayer insulating film(12) and the first stress mitigating layer(13) on a semiconductor substrate(11) is sequentially formed. A contact hole is formed to expose the semiconductor substrate. A diffusion prevention film is formed on the entire structure and is treated by annealing process. After forming a tungsten film (16) so that the contact hole can be filled, an anti-reflection film is formed on the entire structure. The anti-reflection film, the diffusion film and the tungsten film are patterned to form bit lines. Then, the second stress mitigation layer(18) is deposited on the entire structure.