| 摘要 |
PURPOSE: A method for forming a storage node contact is provided to prevent a higher resistance due to a misalignment with a landing plug poly. CONSTITUTION: On a semiconductor substrate(1), the first polysilicon(2), the first tungsten silicide(3), the first mask nitride(4), the first spacer nitride(5), and a landing plug poly(6) are successively formed. Then, the first interlayer dielectric(7), the second polysilicon(8), the second tungsten silicide(9), the second mask nitride(10), the second spacer nitride(11) are successively formed thereon. After that, the second interlayer dielectric(12) is formed and then a resist pattern is formed thereon by using a storage node contact mask. Next, a dry etch process is performed for the second interlayer dielectric(12) through the resist pattern. Thereafter, the third polysilicon(14) is deposited on overall surfaces and then polished. Thereby, a storage node contact of a line shape is obtained.
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