METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to minimize the variation of characteristic by lowering the density of dopant in a source/drain junction area. CONSTITUTION: A method for manufacturing a semiconductor device comprises the following steps. A gate insulating layer and a gate electrode(3) are formed on an upper portion of a semiconductor substrate(1). An N type dopant with the density of 1 to 10x1013/cm¬3 is implanted on a filed effect transistor area of the semiconductor substrate(1) in order to form a dopant junction area of low density. An insulating layer spacer is formed on a gate electrode sidewall. An N type dopant with the density of 1 to 10x1014/cm¬3 is implanted on an N channel field effect transistor area of the semiconductor substrate(1) in order to form a dopant junction area of high density. A P type dopant with the density of 1 to 10x1014/cm¬3 is implanted on a P channel field effect transistor area of the semiconductor substrate(1) in order to form a dopant junction area of high density. A conductive wiring(10) is formed to be connected the dopant junction area.