| 摘要 |
PURPOSE: A semiconductor memory device is provided which reduces a current consumption and noise steeply. CONSTITUTION: A semiconductor memory device has more than two banks(20-23) connected each other by a global address line(32) receiving an external address through an input buffer during a read/write operation, and the bank comprises a predecoder(24-27) selecting the corresponding bank by decoding an address signal from the global address line. The semiconductor memory device increases the address sequentially in each bank during a burst operation, by installing an internal address generation unit(28-31), generating an internal address in each bank. The memory device increase the address by using the global address line only when a command is inputted from the external and by counting the inputted address signal directly in each bank when operated as many as the internally predetermined number.
|
