| 摘要 |
PURPOSE: A method for forming an alignment mark of a semiconductor device is provided to measure easier a degree of alignment. CONSTITUTION: To form an alignment mark having a contact hole shape, the first insulating layer(13) is first formed on a semiconductor substrate(11). Then, a reflecting layer(15) is formed on the first insulating layer(13). Here, the reflecting layer(15) may be formed simultaneously with word lines or bit lines. Next, the second insulating layer(17) is formed on the reflecting layer(15) and then selectively etched. A contact hole partially exposing the reflecting layer(15) is thereby formed in the second insulating layer(17). After that, a polysilicon layer and the third insulating layer are formed thereon. Particularly, since the reflecting layer(15) strongly reflects measuring signals, a degree of alignment can be easier measured.
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