SEMICONDUCTOR MEMORY DEVICE AND DRIVING SIGNAL GENERATOR SUITABLE TO THE DEVICE

摘要

PURPOSE: A semiconductor memory device is provided to reduce current consumption as sensing one part only including a memory cell being actually accessed among memory cells connected to a selected word line at a normal operation. CONSTITUTION: A semiconductor memory device includes a sub word line(WL1a,WL1b), a sub word line driver(70a,70b), a driving signal generator, and a control signal generator. The sub word line is formed as dividing the word line in the direction of the column direction. The sub word line driver drives the sub word line. The driving signal generator bases on a row address and drives the sub word line driver in response to a word line selecting signal for selecting the word line and a control signal. The control signal generator bases on the column address and generates a control signal being supplied the driving signal generator in response to a driving signal generator selecting signal for selecting the driving signal generator and a mode signal designating a normal/refresh operation of the semiconductor memory device.