| 摘要 |
PURPOSE: A method for a tungsten-metal gate structure of a semiconductor device is provided to improve a gate oxide integrity(GOI) characteristic and a transistor characteristic of the tungsten-metal gate structure, by forming a conductive diffusion blocking layer on a doped polysilicon layer. CONSTITUTION: A gate oxide layer(22) and a doped polysilicon layer(23) are sequentially formed on a semiconductor substrate(21) having a lower structure. N+ ion and Si+ ion activated by a radio frequency plasma of SiH4 gas and N2 gas are formed, and the SiH4 and N2 gas is deoxidized to form an SiNx conductive diffusion blocking layer(25) on the doped polysilicon layer. A tungsten layer is formed on the entire structure.
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