METHOD FOR FORMING CONTACT OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a contact of a semiconductor device is provided to reduce a contact resistance when forming a contact between conductive wiring. CONSTITUTION: A method for forming a contact of a semiconductor device comprises the following steps. A word line of a polycide structure is formed with the first poly(13) and the first tungsten silicide(15). An insulating interlayer(17) is formed to flatten an upper portion of the word line. A contact hole(19) is formed to expose the first tungsten silicide(15). A bit line of a lamination polycide structure is connected with the word line through the word line. In the method, a rinsing process is performed after the contact hole is formed.