METHOD FOR SUPPLYING GAS IN PROCESS FOR FORMING THIN FILM

摘要

PURPOSE: A method for supplying gas in a process for forming a thin film is provided to improve uniformity of the thin film deposited on a semiconductor wafer, by maintaining a constant quantity of source gas induced into a process chamber. CONSTITUTION: A liquid mass flow controller for controlling the quantity of liquid flowing to a chamber is established in a line through which a liquid source is supplied to the chamber in a process for forming a thin film on a semiconductor wafer. A valve established between the mass flow controller and the liquid source is opened by a predetermined quantity. A constant pressure is applied at the entrance of the mass flow controller.