| 摘要 |
PURPOSE: A method for flattening a semiconductor device is provided to improve the productivity of the semiconductor device by increasing the uniformity of processes. CONSTITUTION: The first interlayer insulation film is formed on a semiconductor substrate formed with a predetermined wire layer. A polishing stop layer is formed on the first interlayer dielectric film. Then, the second interlayer dielectric film is formed on the polishing step layer. After that, a CMP(Chemical Mechanical Polishing) process is carried out until the polishing stop layer is exposed by using slurries which slowly polish the polishing stop layer, thereby flattening the first and second interlayer dielectric films. Then, the polishing stop layer is removed. The first and second interlayer dielectric films are formed by an oxide film.
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