| 摘要 |
PURPOSE: A memory device for driving a packet command is provided which has an improved input/output structure which improves the driving capability of an output stage and at the same time assures the stability to ESD(Electrostatic Discharge). CONSTITUTION: The device improves the driving capability of an output stage as driving a current by the conventional method. The memory device has an input/output structure which is connected to the GND and an output pad(60), and where a plurality of driving transistors(41-4n) driven according to a data signal are connected in parallel. The memory device comprises a control circuit to control the rest of the driving transistors except the driving transistor in the first front stage among the plurality of the driving transistors by inputting a plurality of current control signals. The control circuit comprises a plurality of control units(51-5n-1). Each control unit is connected to two adjacent driving transistors, and comprises: a transfer unit(5a) to transfer the data signal to a gate of the driving transistor according to the corresponding current control signal; an inversion unit(5b) to invert the corresponding current control signal; and a blocking unit(5c) being connected between the GND and the gate of the driving transistor to prevent the data signal from being transferred to the gate of the driving transistor according to an output signal of the inversion unit.
|
