发明名称 |
PUMPING CIRCUIT OF SEMICONDUCTOR MEMORY DEVICE |
摘要 |
PURPOSE: The pumping circuit of a semiconductor device is provided to prevent internal voltage from being overpumped by using the pulse width of an oscillator to reduce the variation of internal voltage. CONSTITUTION: In the device, a first comparator(11) compares the level of inner voltage supplied to an inner circuit of a memory device with the first predetermined voltage. An oscillator(12) outputs a signal corresponding to the result signal from the first comparator(11). A second comparator(13) enabled by the output signal of the first comparator(11) compares the result signal of the first comparator(11) with a second comparator(13). A driving part(14) is operated by the logic of the oscillator pulse signal and the second comparator signal and outputs signal to pump external voltage(VDD).
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申请公布号 |
KR100273278(B1) |
申请公布日期 |
2001.01.15 |
申请号 |
KR19980003985 |
申请日期 |
1998.02.11 |
申请人 |
HYUNDAI MICRO ELECTRONICS CO., LTD. |
发明人 |
JIN, SEUNG EON |
分类号 |
H02M3/07;(IPC1-7):G11C11/40 |
主分类号 |
H02M3/07 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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