发明名称 PUMPING CIRCUIT OF SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE: The pumping circuit of a semiconductor device is provided to prevent internal voltage from being overpumped by using the pulse width of an oscillator to reduce the variation of internal voltage. CONSTITUTION: In the device, a first comparator(11) compares the level of inner voltage supplied to an inner circuit of a memory device with the first predetermined voltage. An oscillator(12) outputs a signal corresponding to the result signal from the first comparator(11). A second comparator(13) enabled by the output signal of the first comparator(11) compares the result signal of the first comparator(11) with a second comparator(13). A driving part(14) is operated by the logic of the oscillator pulse signal and the second comparator signal and outputs signal to pump external voltage(VDD).
申请公布号 KR100273278(B1) 申请公布日期 2001.01.15
申请号 KR19980003985 申请日期 1998.02.11
申请人 HYUNDAI MICRO ELECTRONICS CO., LTD. 发明人 JIN, SEUNG EON
分类号 H02M3/07;(IPC1-7):G11C11/40 主分类号 H02M3/07
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