METHOD FOR MAKING ANTI-FUSE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming anti-fuse of a semiconductor device is provided to achieve a signal transmission at a low voltage by lowering a breakdown voltage of a dielectric layer in an anti-fuse using the dielectric layer. CONSTITUTION: An interfacial insulating layer is formed on a semiconductor substrate(11) having a cell area and a peripheral circuit area. A conductive layer(12) is formed on the peripheral circuit area, and then the first smoothing layer(13) is formed. A contact mask which exposes a part determined as a lower electrode contact in the cell area and another part determined as a lower electrode contact in a conductive layer of the peripheral circuit area is used as an etching mask, and the first smoothing layer is etched to form a lower electrode contact hole. A part determined as a lower electrode contact in the cell area and a lower electrode connected to the conductive layer of the peripheral circuit area are formed via the lower electrode contact hole. A dielectric layer and an upper electrode are formed on the total structure. A photoresist pattern(17) is formed to expose a capacitor's upper electrode used as an anti-fuse in the peripheral circuit area. Impurities are ion-implanted by using the photoresist pattern as an ion-implantation mask, the photoresist pattern is removed, and then the second smoothing layer is formed on the total structure. An upper electrode of the peripheral circuit area and a metal wiring connected to the conductive layer are formed.