| 摘要 |
PURPOSE: A method for forming a metal wiring made of a line and plug structure is provided to minimize a damage of a sub layer of an excessive etching, and minimizes a loss of a sub layer and a damage caused by a plasma induction by excessively etching a relatively thin film after forming a line pattern. CONSTITUTION: An interfacial insulating layer(75) formed on a semiconductor substrate is selectively etched to form a contact hole. The first conductive layer is formed on the interfacial insulating layer as well as in the contact hole. The first conductive layer is fully plasma-etched, and the first conductive layer remains on the interfacial insulating layer and in the contact hole. The second conductive layer is formed on the first conductive layer. The second conductive layer is selectively plasma-etched to form the second conductive layer pattern, and the first conductive layer is used as an etching prevention layer. The exposed first conductive layer is mainly etched by using a plasma. The first conductive layer is excessively etched by using a plasma, thereby forming the first conductive layer pattern. The first conductive layer pattern exposes the interfacial insulating layer, and is connected to the second conductive layer pattern.
|
