| 摘要 |
PURPOSE: A semiconductor device manufacturing method is provided to be capable of preventing depletion phenomenon of a P-type gate by effectively preventing diffusion of a P-type impurity upon formation of a dual gate. CONSTITUTION: An NMOS and a PMOS transistor area are defined. A semiconductor substrate(10) in which a P-well(11) is formed in the NMOS transistor and a N-well(12) is also formed in the PMOS transistor is then provided. A gate insulating film(13) and a polysilicon film(14) are sequentially formed on the substrate. Then, N-type impurity ions are implanted into the polysilicon film of the NMOS transistor region and P-type impurity ions are also implanted into the polysilicon film of the region of the PMOS transistor. A diffusion blocking layer(16) is then formed on the surface of the polysilicon layer. Thereafter, a metal silicide film(17) is formed on the diffusion blocking layer, and the metal silicide film, the diffusion blocking layer and the polysilicon film are sequentially patterned, thus forming a P-type gate in the PMOS transistor region, forming a N-type gate in the NMOS transistor region and forming a spacer(18) at the sidewalls of N-type and P-type gates.
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