| 摘要 |
PURPOSE: A pulse word line signal generator is provided to reduce a current consumption by generating a pulse word line signal in response to a signal sensing a variation of a sensing operation after consisting of a latch circuit for the pulse word line signal generator and then disabling the pulse word line signal after sensing. CONSTITUTION: A pulse word line signal generator of a semiconductor memory device includes a sensing detector(20) and a latch portion(30). The sensing detector receives an output signal of a sense amplifier and senses a time point when a sensing operation is completed. The sensing detector has a NAND gate(NA3). The latch portion generates a pulse word line signal when a pulse equalization signal is a first logic state and latches the pulse word line signal until when an output signal of the sensing detector becomes a second logic state. The latch portion has a flip-flop consisting of NOR gates(NR1,NR2). The first logic state is a logic high.
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