METHOD FOR FORMING DAMASCENE TYPE METAL WIRES IN SEMICONDUCTOR DEVICES USING CMP AND SPIN ETCH PROCESS

摘要

PURPOSE: A damascene type metal wiring formation method is provided to relax a metal dishing and an erosion of an interlayer dielectric when a damascene type metal line is formed of a barrier metal/a wiring metal. CONSTITUTION: A damascene type metal wiring formation includes forming an interlayer dielectric(10) on a semiconductor substrate in which given underlying layers are formed. The interlayer dielectric is selectively etched to form a contact hole and a trench for line. Then, a barrier metal(11) and a line metal(12) are formed on the entire structure to fill the trench for line. Next, the line metal is polished by CMP(chemical mechanical planarization) process until the barrier metal is exposed. The barrier metal on the interlayer dielectric is removed by means of spin etch process.