METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to guarantee a stable electrical characteristic by preventing a grooving phenomenon on a surface of a doped polycrystalline silicon layer, and to prevent a defect by preventing the doped polycrystalline silicon layer and a tungsten silicide layer from diffusing to each other. CONSTITUTION: A gate insulating layer(42) and a doped polycrystalline silicon layer(43) are sequentially formed on a semiconductor substrate(41). An oxide layer as a diffusion barrier layer(44) is formed on the doped polycrystalline silicon layer. A tungsten silicide layer(45) is formed on the diffusion barrier layer. The doped polycrystalline silicon layer is formed by using SiH4 gas or Si2H6 gas containing phosphor or arsenic.