| 摘要 |
PURPOSE: A method for forming a via hole of a semiconductor device is provided to form a stable via profile and improve the reliability of a device by using an existing PE-CVD equipment. CONSTITUTION: A method for forming a via hole of a semiconductor device comprises the following steps. The first insulating layer(23), an SOG layer(24), and the second insulating layer(25) are formed on a semiconductor substrate(21). A photoresist pattern(26) is formed on an upper portion of the insulating layer(25). A via hole is formed by etching the insulating layer(25). A silicon oxide nitride layer(27) is formed on the exposed SOG layer(24) by performing a plasma process. An upper metal wiring(28) is formed after removing the photoresist pattern(26).
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