METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE HAVING MULTI LAYER METALIZATION

摘要

PURPOSE: A fabrication method of semiconductor devices having multi layer metalization is provided to simplify the multi layer metalization processes by decreasing the number of mask for metalization. CONSTITUTION: First metal wires(11) are formed on a semiconductor substrate(10) by using a first metalization mask. By depositing and patterning a first interlayer dielectric(12), a first via hole(13) is formed to expose the first metal wires. Second metal wires(14') are formed on the resultant structure to electrically connect the first metal wires(11) through the via hole by using the first metalization mask. A second via hole(17) is formed by depositing and patterning a second interlayer dielectric(16). Third metal wires(18) are formed on the second interlayer dielectric to connect the second metal wires by using the first metalization mask.