| 摘要 |
PURPOSE: A semiconductor device formed on an SOI substrate and a method for fabricating the same are to disperse heat generated by an ESD(Electrostatic discharge) current with ease. CONSTITUTION: A semiconductor device comprises: an SOI(Silicon On Insulator) substrate having orderly stacked a handling wafer(11), a buried insulting layer(12) and a silicon layer(13); a field oxide(18) formed for isolation between devices at a selected portion of the silicon layer and having a thickness corresponding to the silicon layer; a hole formed within the buried insulating layer at a lower surface of the filed oxide such that the handling wafer is exposed, and having a thickness smaller than a width of the field oxide; a conductive pass(17) formed on an inner wall of the field oxide, for electrically connecting a conductive layer(16) and the silicon layer within the hole to each other; and a MOSFET formed on the silicon layer. A method for fabricating a semiconductor device comprises the steps of: forming a trench in an SOI substrate; forming a spacer on both side walls of the trench; etching an exposed portion of the buried insulating layer using the spacer as an etch mask to form a hole; removing the spacer; and forming a linear conductive layer to be in contact with the conductive layer.
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