发明名称 |
METHOD FOR CLEANING STENCIL MASK |
摘要 |
PURPOSE: A method for cleaning a stencil mask is provided to greatly improve precision of a pattern, by completely removing every material evaporated on the surface of an absorbing layer after an etching process. CONSTITUTION: Contaminated materials such as a deposition material(10) and an organic material(11) are generated in a wet-etching process for forming a frame of a stencil mask. The stencil mask is wet-etched using a wet-etching liquid which is a basic material melted in an alkaline solvent. The deposition material is peeled off from the surface of an absorbing layer(2) using the basic material. The organic material is eliminated by the alkaline solvent.
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申请公布号 |
KR20010002848(A) |
申请公布日期 |
2001.01.15 |
申请号 |
KR19990022869 |
申请日期 |
1999.06.18 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
KIM, CHEOL GYUN;YEO, GYEONG SU |
分类号 |
H01L21/304;(IPC1-7):H01L21/304 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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