METHOD FOR MANUFACTURING A TRANSISTOR OF A SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a transistor of a semiconductor device is provided to prevent a silicon layer formed on a gate and a silicon layer formed on a source/drain from being short-circuited, by using a selective epitaxial growth(SEG) method. CONSTITUTION: A gate oxidation layer and a polycrystalline silicon layer are sequentially formed on a semiconductor substrate(10). A porous polycrystalline silicon layer is formed by transforming an upper surface of the polycrystalline silicon layer into a porous surface by performing an anodization. Patterned porous polycrystalline silicon layer and gate electrode are formed by patterning the porous polycrystalline silicon layer and a polycrystalline layer under the porous polycrystalline silicon layer. A side wall spacer(28) is formed on a side wall of the patterned porous polycrystalline silicon layer and gate electrode. The patterned porous polycrystalline silicon layer is removed. The first and second silicon layers(30a,30b) are respectively formed on the gate electrode and on a source and a drain formed on both sides of the gate electrode by using a selective epitaxial growth(SEG) method.