CHEMICAL MECHANICAL POLISHING METHOD FOR INSULATING INTERLAYER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A chemical mechanical polishing method for an interlayer dielectricof a semiconductor device is provided to flatten a capacitor of a semiconductor device of 256M or more DRAM by using a Si-rich insulating layer as a polishing stop layer and a ceria slurry. CONSTITUTION: A chemical mechanical polishing method for an interlayer dielectric of a semiconductor device comprises the following steps. An oxide layer having enough silicon(17) as a polishing stop layer is formed on an upper portion of a semiconductor substrate(1) formed with a capacitor(4). A polishing object layer(18) is formed on an upper portion of the polishing stop layer(17). A chemical mechanical polishing process for the polishing object layer(18) is performed by using a slurry of ceria series until the polishing object layer(18) is exposed.