METHOD FOR FORMING PAD NITRIDE LAYER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a pad nitride layer of a semiconductor device is provided to simplify a manufacturing process by depositing the pad nitride layer and performing an O2 annealing process within one equipment in order to form an oxynitride layer. CONSTITUTION: A method for forming a pad nitride layer of a semiconductor device comprises the following steps. An oxide layer(20) is deposited on an upper portion of the semiconductor substrate(10) in order to reduce the stress of the pad nitride layer(30). The pad nitride layer(30) is deposited on the oxide layer(20). An oxynitride layer(40) is formed thereon by performing an O2 annealing process. An ISO mask(50) used as an etching layer is formed on the oxynitride layer(40).