METHOD FOR FORMING GATE LINE OF TFT LCD

摘要

PURPOSE: A method for forming a gate line of a TFT LCD is provided to simplify an etching process by forming an accumulating layer including an AlNd metal layer and a Mo metal layer as a gate line. CONSTITUTION: A method for forming a gate line of a TFT LCD comprises the following steps. An AlNd metal layer(22) and a Mo metal layer(23) are deposited on an insulating substrate(21). A photoresist pattern(24) is formed on the Mo metal layer(23) in order to expose a predetermined portion of the Mo metal layer(23). The exposed portion of the Mo metal layer(23) and the AlNd metal layer(22) arranged on its lower portion are etched sequentially. In the process for etching the Mo metal layer(23) and the AlNd metal layer(22), a mixed etchant is used.