| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetron sputtering device by which the intrusion of discharge gas atoms into a film is reduced, and the obtainment of the formation of film of high quality is made possible. SOLUTION: This magnetron sputtering device is provided with a film forming chamber 1 in which a substrate 3 in which a thin film is formed on the inside and a target 5 to be the base material of the thin film are arranged, and discharge gas for obtaining ions for sputtering has been introduced, a magnet part 7 forming the desired magnetron magnetic field on the surface of the target 5 and a power source device 8 executing the intermittent feed and control of pulse electric power to the target 5. In this case, the pulse period of the pulse electric power is set in such a manner that the arrival time of sputtering particles emitted from the target 5 and the arrival time of discharge gas atoms made electrically neutral after the infiltration into the target 5 and sprung out by the collision of the ions at the substrate 3 are made different.
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