| 摘要 |
PROBLEM TO BE SOLVED: To provide the subject method intended for sufficiently reducing power consumption by a heater in melting polycrystalline silicon to improve the efficiency in single crystal rod growth process. SOLUTION: This method comprises heating and melting, with a heater 18, polycrystalline silicon lumps or granules 48 in a quartz crucible 13 as a component of a silicon single crystal pulling device 10 which has the quartz crucible 13 placed inside a chamber 11, the heater 18 set up so as to surround the outer circumferential surface of the crucible 13, a cylindrical thermal shield member 26 provided around the pulling area for a silicon single crystal rod above the crucible and having the function to block the radiant heat emitted from the heater, and a thermal shield member lift means 41 designed to make the thermal shield member 26 movable vertically; wherein during the period of time ranging from the beginning of heating with the heater 18 to the completion of melting the lumps or granules 48, the means 41 works so as to dispose the lower end of the thermal shield member 26 above or in the vicinity of the upper surface of an assembly of the lumps or granules 48 descending as their melting advances.
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