| 摘要 |
PURPOSE: A method for processing a wafer surface is provided to enhance an element reliability by removing a residual impurity of a wafer surface through a plasma processing after etching an unnecessary oxide layer. CONSTITUTION: A wafer wherein an element forming part is thickly designed is provided. An element related process is performed on the wafer, a photoresist layer is formed to expose an unnecessary oxide layer, and the exposed oxide layer is removed by using an etching process using a plasma. The photoresist layer is removed and then a plasma processing is performed. A quick heat-processing is performed. A wet cleaning process for removing the residual oxide layer on the wafer is performed. Thereby, an unnecessary oxide layer on a wafer is first etched, a plasma processing is performed, then RTA process and a secondary oxide layer etching processing are performed, and thus a residual impurity on the wafer is removed, so that a leakage current of the element is reduced, and Schottkey barrier characteristic is enhanced.
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