| 摘要 |
PURPOSE: A method for forming a charge storage electrode of a capacitor is provided to prevent that a lower storage electrode is easily broken, by forming a lower charge storage electrode wherein a high-etching oxide layer is only removed in an etching process and a low-etching oxide layer is supported at a side. CONSTITUTION: A contact plug is formed on a semiconductor substrate having a predetermined lower structure. An etching prevention layer, a low-etching oxide layer(50) and a high-etching oxide layer are sequentially formed and patterned, thereby forming a contact hole at a forming part of a charge storage electrode. Amorphous polysilicon layer having a predetermined thickness is deposited on the resultant material, and then a grain projection(70) is formed. A burying oxide layer is buried in the resultant material, and a part between cells of a capacitor is separated by an etch-back process and CMP process. The residual burying oxide layer and a high-etching oxide layer are etched by a chemical solution, and thus a low-etching oxide layer(50) only remains. Thereby, the method prevents that a charge storage electrode of the capacitor is broken by a post-process, solves a poor electrical connection, and enhances a production yield of a semiconductor device.
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