| 摘要 |
PURPOSE: A method for manufacturing a capacitor storage electrode is provided to maintain a stable structure at a high temperature, by forming the capacitor storage electrode with a stacked structure consisting of a titanium silicide layer, a Ti-Al compound layer and a Pt layer. CONSTITUTION: A polysilicon plug(32) is formed in an interlayer dielectric(31) formed on a semiconductor substrate(30). A Ti layer and an Al layer are sequentially formed on the entire structure. A thermal process is performed to transform an upper portion of the polysilicon plug to a Ti silicide layer and to form a Ti-Al layer contacting the Ti silicide layer. A Pt layer is formed on the Ti-Al compound layer. The Pt layer and the Ti-Al compound layer are patterned to form a storage electrode composed of the Ti silicide layer, the Ti-Al compound layer and the Pt layer. A dielectric layer and a plate electrode are sequentially formed on the storage electrode.
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