| 摘要 |
PURPOSE: A method for forming a passivation film of a semiconductor device is provided to improve the refresh feature of the semiconductor device by depositing the passivation film in two steps. CONSTITUTION: A metal layer is formed on a semiconductor substrate(11) formed with a lower structure. A metal wire(12) is formed by patterning the metal layer. Then, the first passivation film(13A) is formed on the structure by using a high density plasma oxide film. The thickness of the first passivation film(13A) is in the range of 3000 to 7000 angstrom. In order to improve the refresh feature of the semiconductor device, the flow rate of SiH4 is set to 80 to 100sccm, the flow rate of O2 is set to 115 to 135sccm for the first passivation film(13A). At this time, the bias is not applied. Then, the second passivation film(13B) is formed on the structure by using the high density plasma oxide film.
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