METHOD FOR FORMING GATE ELECTRODE HAVING COBALT SILICIDE FILM

摘要

PURPOSE: A method for forming gate electrode having cobalt silicide film is provided to form a gate electrode structure thermally stabilizing with a smooth interface of a cobalt silicide film and a doped poly silicon film by forming the doped polysilicon film to have a multi-layered structure. CONSTITUTION: A device isolation film is formed on an upper surface of a silicon substrate(100), and a gate oxide film(112) is formed on an active area of the substrate isolated by the device isolation film. The first doped polysilicon film(104) is deposited on the gate oxide film. The second doped polysilicon(106) is deposited on the first doped polysilicon film with a depositing temperature of a doped polysilicon being increased. A cobalt is deposited on the second doped polysilicon film using a physical vapor deposition or chemical vapor deposition process, and the substrate is treated with a rapid thermal process to form a cobalt silicide film(108). The cobalt silicide film and the doped polysilicon film are patterned to form a gate electrode on the gate oxide film. A spacer film(110) consisting of an insulation film is on both sides of the gate electrode.