METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to prevent a time delay phenomenon and to sufficiently charge a memory cell capacitor, by increasing a junction area where a storage node or bit line contacts a transistor, and by reducing a storage node contact resistance to shorten a time constant in a read/write operation. CONSTITUTION: A transistor has an impurity diffusion region in an active region of a semiconductor substrate(20), including a gate insulating layer(21), a cap insulating layer(24) and a side wall spacer(25) on a gate formation region of the semiconductor substrate. Only a predetermined portion of the impurity diffusion region adjacent to the side wall spacer is exposed, and the rest is covered with an insulating layer. A predetermined depth of the exposed impurity diffusion region is removed to form a contact portion. A contact plug is formed in the contact portion.