METHOD FOR FORMING DAMASCENE TYPE METAL WIRING OF SEMICONDUCTOR DEVICE USING CHEMICAL MECHANICAL PLANARIZATION AND SPIN ETCH PROCESS

摘要

PURPOSE: A method for forming a damascene type metal wiring of a semiconductor device using a chemical mechanical planarization and a spin etch process is provided to prevent a dishing effect and an erosion effect by performing a spin ethcing process and a chemical mechanical planarization process. CONSTITUTION: A method for forming a damascene type metal wiring of a semiconductor device using a chemical mechanical planarization and a spin etch process comprises the following steps. An insulating interlayer(30) is formed on an upper portion of a semiconductor substrate. A contact hole and a trench are formed by etching the insulating interlayer(30). A barrier metal(31) and a wiring metal(32) are formed on the whole surface of the structure. The trench is buried. A spin etching process for the wiring metal(32) is performed to expose the barrier metal(31). A chemical mechanical planarization process is performed to polish the barrier metal(31).