NONVOLATILE FERROELECTRIC MEMORY DEVICE AND METHOD FOR DRIVING THE DEVICE

摘要

PURPOSE: A nonvolatile ferroelectric memory device and method for driving the device is provided to independently select only one cell when programming an information of the first state and the second state, thereby preventing a drain disturb at a nonselected cell. CONSTITUTION: A nonvolatile ferroelectric memory device includes a large number of ferroelectric transistor cells, a large number of word lines(W/L), a large number of source lines(S/L), a large number of bit lines(B/L), and a large number of well lines. The large number of ferroelectric transistor cells are arranged in a matrix in the direction of a row and a column. The large number of word lines are commonly connected to each gate electrode of the ferroelectric transistors in each row direction. The large number of source lines are commonly connected to one side junction of the ferroelectric transistor in each column direction. The large number of bit lines are commonly connected to other side of the ferroelectric transistors in each column direction. The large number of well lines are commonly connected to the well of the ferroelectric transistors in each column direction.