METHOD FOR MANUFACTURING THIN FILM TRANSISTOR ARRAY SUBSTRATE

摘要

PURPOSE: A method for manufacturing a thin film transistor array substrate is to uniformly form a metal oxide film under a protective film, thereby preventing a defect occurring to the protective film and an open of a data line. CONSTITUTION: A method of manufacturing a thin film transistor array substrate comprises the steps of: forming a gate line having a gate electrode(22) on a conductive substrate; doping a gate insulation film(23); forming sequentially a semiconductor layer(24), an ohmic layer and a metal layer; forming a pattern of a photosensitive film on the metal layer; forming the first metal oxide film(26a) by oxidizing a portion of an exposed metal layer; forming the thin film transistor by etching the first metal oxide film, the ohmic layer and the semiconductor layer; removing the pattern of a photosensitive film; forming the second metal oxide film(26b) by oxidizing the remaining metal film; doping a protective film(31) on the resultant created after forming the second metal oxide film; forming a contact hole(32) exposing a source electrode; and forming a pixel electrode contacted with the source electrode on the protective layer.