METHOD FOR MANUFACTURING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing capacitor of semiconductor device is provided to prevent a short between storage electrodes by forming an HSG(Hemispherical Silicon Grain) at both sidewalls of the storage electrode. CONSTITUTION: A first interlayer dielectric(105) having a first contact hole and an etch stopper(111) is formed on a semiconductor substrate(101) having an impurity diffusion region(103) so as to expose the impurity diffusion region. A plug(109) is filled into the first contact hole. A second interlayer dielectric(113) having a second contact hole is formed on the etch stopper(111) to expose the plug(109). A plurality of HSGs(123) are formed on the entire surface of the resultant structure. A sacrificial layer is formed on the second interlayer dielectric(113) without covering the sidewalls of the second contact hole. After removing the sacrificial layer and the second interlayer dielectric, a doped silicon layer is filled into the second contact hole, thereby forming a storage electrode(121) having the HSGs(123) only formed at both sidewalls of the storage electrode.