METHOD FOR MANUFACTURING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing capacitor of a semiconductor device is provided to prevent a collapse of a sidewall fence by forming a curvature at a top of sidewall profile. CONSTITUTION: A first insulating layer(30) of BPSG(BoroPhosphoSilicate Glass) and a second insulating layer(32) of PE-TEOS(PE-Tetra Ethyl Ortho Silicate) are sequentially formed on a semiconductor substrate. Grooves are formed by sequentially etching the second and first insulating layers. After forming a first polysilicon layer on the resultant structure, a third insulating layer(38) as a core-oxide is filled into the grooves. An anti-reflection layer is formed on the third insulating layer. By cleaning the resultant structure using HF chemicals, the losses of the third insulating layer(38) is generated, thereby forming a curvature. Then, sidewalls(42) of a polysilicon layer are formed at both sidewalls of the third insulating layer(38).