| 摘要 |
PURPOSE: A semiconductor laser device and a manufacturing method thereof are provided to prevent efficiency degradation and optical degradation of the device in accordance with introduction of dopant of p-clad layer into an active layer by annealing the active layer into disordered state using laser. CONSTITUTION: On a semiconductor substrate(21) are successively deposited a first clad layer(23), an active layer(24), a second clad layer(25) to form a laser oscillated layer. A laser beam is irradiated on a region of laser oscillated layer excluding an electro-conductive region to form a disordered region in a portion of the first clad layer, the active layer and the second clad layer about the active layer. Before the irradiation of laser beam, a cap layer(26) corresponding to the electro-conductive region of the active region is formed on the second clad layer. The cap layer is used as a mask so that the laser beam is irradiated on the region excluding the electro-conductive region.
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