| 摘要 |
PURPOSE: A semiconductor LCVD(Low pressure Chemical Vapor Deposition) apparatus is provided to reduce the number of inferior semiconductor due to pollution of a wafer by improving a structure of a semiconductor LCVD apparatus. CONSTITUTION: A heater(22) is installed at an outside of a liner tube(21). A process chamber assembly(23) is installed at an inside of the liner tube(21). A boat(25) for loading a wafer(24) is installed at a lower side of the process chamber assembly(23). A gas injection tube(26) is installed at one side of a lower end portion of the process chamber assembly(23). An exhaust line(27) is installed at the other side of a lower end portion of the process chamber assembly(23). A pump(28) and a scrubber(29) are installed on the exhaust line(27). The process chamber assembly(23) is formed with an inner tube(31), an outer tube(32), and a gate valve(33).
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