发明名称 THERMAL TREATMENT APPARATUS FOR WAFER AND METHOD THEREOF
摘要 PURPOSE: A thermal treatment apparatus is provided to solve the problem of bottle-neck phenomenon occurring during semiconductor manufacture process, by thermally processing in parallel wafers using a plural set of thermal treatment apparatus. CONSTITUTION: A thermal treatment apparatus includes a thermal transfer plate(20) and spacers(30) installed projectedly against an upper face of the thermal transfer plate, for oppositely supporting with a separated state the thermal transfer plate. The spacers is each installed to control independently the projection height against the upper face of the thermal transfer plate so that the distance between the wafer supported by the spacers and the thermal transfer plate and the grade of the wafer to the thermal transfer plate could be controlled.
申请公布号 KR20010004643(A) 申请公布日期 2001.01.15
申请号 KR19990025341 申请日期 1999.06.29
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHAE, HUI SEON;JANG, SEONG IL;JUN, GI HYEON;KIM, CHEONG HYEOP;PARK, GYEONG SEO
分类号 G03F7/38;G03F7/40;H01L21/00;H01L21/027;H01L21/324;(IPC1-7):H01L21/324 主分类号 G03F7/38
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