FLASH EEPROM CELL AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A flash EEPROM cell and a method for manufacturing the same are provided to form two different floating gates in one cell by using a hard mask layer in a multi-level cell. CONSTITUTION: A flash EEPROM cell and a method for manufacturing the same comprise the first floating gate(130a), the second floating gate(130b), a control gate(17), a drain junction portion(18a), and a source junction portion(18b). The first and the second floating gates(130a,130b) is separated electrically a semiconductor substrate(11) by a tunnel oxide layer(12). The first and the second floating gates(130a,130b) have different sizes. The control gate(17) is separated electrically from the first and the second floating gates(130a,130b) by a dielectric layer(16). The drain junction portion(18a) is formed on the semiconductor substrate(11) of the first floating gates(18b). The source junction portion(18b) is formed on the semiconductor substrate(11) of the second floating gate(130b).