ELECTRON BEAM MASK PATTERN

摘要

PURPOSE: An electron beam mask pattern is provided to form an electron beam mask pattern for controlling contact inconsistency between line patterns and a repelling power of electrons by increasing a contact area between an upper pattern and a lower pattern of the electron beam mask pattern. CONSTITUTION: An electron beam mask pattern is formed by a line pattern. The electron beam mask pattern is exposed continuously since one side of the line pattern and the other side of the line pattern are formed by a concave shape and a convex shape. One of an upper pattern and an opposite of a lower pattern are overlapped to each other. The contact inconsistency is prevented by forming a mask having the line patterns of the concave shape and the convex shape.