METHOD FOR MAKING SEMICONDUCTOR DEVICE WHICH PREVENTS DAMAGE OF PLUG IN FORMING TUNGSTEN BIT LINE

摘要

PURPOSE: A method for making a semiconductor device is provided to increase a process margin by effectively preventing a damage of a plug in the etching process for forming a bit line. CONSTITUTION: An interfacial insulating layer(31) formed on a conductive layer is selectively etched, and thus a contact hole(C) exposing the conductive layer is formed. TiN plug is formed in the contact hole. A tungsten layer(33) is formed on the total structure, and is selectively etched to form a tungsten layer pattern. At this time, the etching process using WF6 gas is performed. The tungsten layer pattern is a bit line. TiN layer(32) is formed by CVD method using TiCl4.