发明名称 |
SEMICONDUCTOR CHIP, MANUFACTURING METHOD THEREOF AND METHOD OF STACKING SEMICONDUCTOR CHIP |
摘要 |
PURPOSE: A semiconductor chip, a manufacturing method thereof and a method of stacking the semiconductor chip are provided to cut a wafer with an etching and back-lap process instead of a sawing and back-lap process to reduce a thickness of the chip, and facilely electrically connect the chips when stacking the chips. CONSTITUTION: The device comprises a semiconductor substrate(120) having a desired thickness between an upper face and a lower face thereof; an internal metal wire(130) formed on an upper face of the semiconductor substrate and including an electrode pad(150); an insulation protecting film(140) formed on the upper face of the semiconductor substrate except the electrode pad; and an external metal wire(170) formed on the insulation protecting film. In the chip, the desired thickness is below 50 Um. A method of stacking the semiconductor chip comprises the steps of; preparing the plurality of semiconductor chips; bonding each chip on an upper face of other chip in order; and connecting each external metal wire at the side of the chip with a conductive interconnector.
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申请公布号 |
KR20010002428(A) |
申请公布日期 |
2001.01.15 |
申请号 |
KR19990022232 |
申请日期 |
1999.06.15 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
AHN, SANG HO;KIM, HYEON GI;KIM, SANG YEONG;LEE, GYU JIN;SHIN, UN HA |
分类号 |
H01L21/78;(IPC1-7):H01L21/78 |
主分类号 |
H01L21/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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