| 摘要 |
PURPOSE: A method for forming a multi-layer wiring is to easily carry out an exposure process before the deposition of a wiring layer, without passing through a flatness process. CONSTITUTION: The first metal wiring(13) and the first interlayer insulation film(15) are formed on a surface of a semiconductor substrate(11), and the second metal wiring(17) is formed thereon, the second metal wiring being contacted with the first metal wiring through the first interlayer insulation film. After the second interlayer insulation film(19) is formed on the second metal wiring, the third metal wiring(21) connected to the second metal wiring is formed on the second interlayer insulation film. The metal wiring formed on the substrate is divided into a section A superposed with the first, second, and third metal wiring, a section B superposed with the first and third metal wiring or the second and third metal wiring, and a section C superposed with the third metal wiring. First to third exposing masks are formed on the sections A to C, respectively.
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